Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing

In this paper, we report the effect of post-gate metallization annealing on performance GaN-based High Electron Mobility Transistors (HEMTs). The performances HEMTs annealed at 200 °C (HEMT1) and 400 (HEMT2) for 5 minutes in N2 ambient are compared. While there is a kink output characteristics HEMT1, no such HEMT2. attributed to impact ionization GaN channel. Surface interface traps HEMT1 increase peak electric field drain side gate edge cause ionization. higher temperature reduces surface traps, which HEMT2 suppresses This substantiated by TCAD simulations. Threshold voltage instability application negative bias stress was also examined these devices. A positive shift threshold observed stress, whereas corresponding HEMT2, indicating presence two different types